Ostendo GaN - Product Validation

LED on SP GaN vs. c-plane GaN (PARC)	LED: Semi-polar vs. c-plane MQW semi-polar LED structure was grown side-by-side with a c-plane LED structure in the same MOCVD run. Longer peak wavelength. The same indium incorporation produced a semi-polar LED with a peak wavelength that was ~25 nm longer than its c-plane counterpart. 2× emission intensity. The semi-polar LED achieved more than double the emission intensity of the c-plane reference LED.

LED on SP GaN vs. c-plane GaN (PARC)

LED: Semi-polar vs. c-plane

MQW semi-polar LED structure was grown side-by-side with a c-plane LED structure in the same MOCVD run.

The same indium incorporation produced a semi-polar LED with a peak wavelength that was ~25 nm longer than its c-plane counterpart.

The semi-polar LED achieved more than double the emission intensity of the c-plane reference LED.

Optically pumped lasing spectra of SP InGaN/GaN for different GaN waveguide core thicknesses (PARC)	Laser Diode: Lasing spectra PARC was able to demonstrate lasing near 500 nm on SP GaN/InGaN. 500nm lasing. Threshold for lasing was achieved with pulses of 2.2 MW/cm²

Optically pumped lasing spectra of SP InGaN/GaN for different GaN waveguide core thicknesses (PARC)

PARC was able to demonstrate lasing near 500 nm on SP GaN/InGaN.

Threshold for lasing was achieved with pulses of 2.2 MW/cm²